BU808DFH |
RFQ for BU808DFH Required Field |
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| Product | Manufacturers | Pack | D/C |
| BU808DFH | - | - | - |
The BU808DFH is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
Typical Application |
Features |
| · COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. | · NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· LOW BASE-DRIVE REQUIREMENTS· DEDICATED APPLICATION NOTE AN1184· FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING· CREEPAGE PATH > 4 mm |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage (IE = 0) | 1400 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | 700 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
| IC | Collector Current | 8 | A |
| ICM | Collector Peak Current (tp < 5 ms) | 10 | A |
| IB | Base Current | 3 | A |
| IBM | Base Peak Current (tp < 5 ms) | 6 | A |
| Ptot | Total Dissipation at Tc = 25 | 42 | W |
| Visol | Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink |
2500 | V |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
